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Specification
Brand : Juried Engineering
BulletPoint1 : Collector to emitter breakdown voltage of 160V
BulletPoint2 : Collector to emitter saturation voltage of 200mV at 50mA collector current
BulletPoint3 : Power dissipation of 625mW, Operating junction temperature range from -55°C to 150°C
BulletPoint4 : DC collector current of 600mA, DC current gain of 30 at Ic=50mA
BulletPoint5 : Example Applications: Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
ExternallyAssignedProductIdentifier1 : 0799993469818
ExternallyAssignedProductIdentifier2 : 799993469818
ItemName : Juried Engineering ON Semiconductor/Fairchild 2N5551 Bipolar (BJT) Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE (Pack of 10)
ItemTypeKeyword : bjt-transistors
Manufacturer : ON Semiconductor/Fairchild
Material : PDIP
ModelNumber : 2N5551
NumberOfItems : 10
PartNumber : 2N5551
ProductDescription : The 2N5551 from Fairchild is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
ProductSiteLaunchDate : 2020-07-07T00:46:51.878Z
Size : Juried Engineering ESD Safe Packaging (Pack of 10)
UnspscCode : 32101600