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Specification
Brand : Generic
BulletPoint1 : Transistor Type: High Efficiency N-Channel Junction Field-Effect Transistor.
BulletPoint2 : Transistor Polarity: N-Channel JFET.
BulletPoint3 : Specification: Max Power Dissipation (PD) of 0.3W, Drain Current (ID) of 0.025A, and Drain-Source Voltage (VDSS) of 30V.
BulletPoint4 : Application: Widely utilized in voltage amplifiers, buffers, constant current sources, circuitry systems, and variable resistance applications.
BulletPoint5 : Package: Comes safely in an Anti-Static bag that provides electrostatic protection, ESD safety, and ensures long shelf life.
ExternallyAssignedProductIdentifier : 6098031244221
ItemName : OEM GLENAIR 557E283M3A06B, (1 Items)
ItemPackageDimensions_Height : 1.3 centimeters
ItemPackageDimensions_Length : 16 centimeters
ItemPackageDimensions_Width : 14 centimeters
ItemTypeKeyword : electronic-component-digital-signal-processors
Manufacturer : generic
ModelNumber : 557E283M3A06B
PartNumber : 557E283M3A06B
ProductDescription :

N-Channel Amplifier - BF245A/BF245B/BF245CDesigned for VHF/UHF amplifiers, the BF245A/BF245B/BF245C N-channel transistors offer robust performance in a TO-92 package.

Key Specifications:

• Drain-Gate Voltage (VDG): 30V
• Gate-Source Voltage (VGS): -30V
• Forward Gate Current (IGF): 10mA
• Total Device Dissipation at 25°C (PD): 350mW
• Operating and Storage Junction Temperature Range (TJ, TSTG): -55 to 150°C

Performance Characteristics:

• Gate-Source Breakdown Voltage (V(BR)GSS): -30V
• Gate-Source Cut-off Voltage (VGS(off)): -0.5 to -8V
• Zero-Gate Voltage Drain Current (IDSS): 2mA to 25mA
• Common Source Forward Transconductance (gfs): 3 to 6.5mmhos

Ideal for applications requiring high-frequency amplification, these transistors ensure reliable operation in various electronic circuits.
ProductSiteLaunchDate : 2022-06-16T20:45:09.313Z
Size : TO-92
Style : BF245A
UnspscCode : 32101600