Cart 2 india

Specification
Brand : Alpha Nanotech
BulletPoint : Low-Voltage Transformers
BulletPoint1 : Grade: Prime / CZ Virgin, Orientation: 100
BulletPoint2 : Resistivity: 0.001 - 0.005 ohm cm
BulletPoint3 : Type/Dopant: P/Boron
BulletPoint4 : Front Surface: Polished, Back Surface: Etched
BulletPoint5 : TIR < 3 μm, TTV < 10 μm, BOW < 10 μm, Roughness < 0.5 nm
Color : Thickness: 650+/-10 um; Size: 6 inches
ExternallyAssignedProductIdentifier : 7375601770564
ExternallyAssignedProductIdentifier1 : 0734038847152
ExternallyAssignedProductIdentifier2 : 734038847152
IncludedComponents : Wafer(s) and Carrier(s)
ItemName : Alpha Nanotech Prime-Grade SSP 4'' Silicon Wafers (P-Type, 500 um, 0.001-0.005 ohm cm) (25)
ItemPackageDimensions_Height : 1 centimeters
ItemPackageDimensions_Length : 3 centimeters
ItemPackageDimensions_Width : 2 centimeters
ItemPackageQuantity : 4
ItemShape : Round
ItemTypeKeyword : electronic-component-ferrites
Manufacturer : Alpha Nanotech
Material : silicon
ModelNumber : TRSFGASX
NumberOfBoxes : 1
NumberOfItems : 25
PartNumber : ANXDF481X4
ProductDescription : Technical Processing Data: Prime-Grade Silicon Wafers and SiO2 Thermal Oxide Wafers: Czochralski (CZ) growth method for standard wafers doped with Boron (i.e. P-type silicon wafers) or phosphorus or arsenic (i.e. N-type silicon wafers) Floating zone (FZ ) growth method for intrinsic/undoped silicon wafers; Orientation: <100>+/- 0.5° or <111>+/- 0.5°; TIR < 3 μm, TTV < 10 μm, BOW < 10 μm, Roughness < 0.5 nm
ProductSiteLaunchDate : 2018-10-21T07:00:00.000Z
Size : Single Side Polished; Resistivity: 1- 30 ohm·cm
SupplierDeclaredDgHzRegulation : not_applicable
UnitCount : 4
UnspscCode : 41000000