100% New Imported Original MBQ60T65PES MBQ60T65 60T65PES 60T65 TO-247 IGBT Single Pipe 60A 650V (10pcs/LOT

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₹ 5500/-

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Product Information


Specification
Brand : Aoweziic
BulletPoint : 5 Pcs SGH40N60UFD G40N60UFD G40N60 IGBT Transistors 600V 40A 160W TO3P
BulletPoint1 : 1: Transistor IGBT adapts to power motherboard
BulletPoint2 : 2: MBQ60T65PES IGBT Transistors meet the specific needs of welding pliers.
BulletPoint3 : 3:Rated current: IGBT field-effect transistor 60A 650V
BulletPoint4 : 4:Features and advantages: Long service life, fast switching, durable materials.
BulletPoint5 : 5:Widely used: MBQ60T65PES 60T65PES IGBT transistors are widely used in various electronic components.
BulletPoint6 : 6:Electrostatic bag packaging, convenient for storage and use. There are labels and labels for easy identification.
ElectricalOutputWaveform : pure_sine_wave
ExternallyAssignedProductIdentifier : 4653023176588
ExternallyAssignedProductIdentifier1 : 0752815253248
ExternallyAssignedProductIdentifier2 : 752815253248
IncludedComponents : electronic component
ItemName : 100% New Imported Original MBQ60T65PES MBQ60T65 60T65PES 60T65 TO-247 IGBT Single Pipe 60A 650V (10pcs/LOT
ItemPackageDimensions_Height : 0.5 centimeters
ItemPackageDimensions_Length : 21.5 centimeters
ItemPackageDimensions_Width : 8 centimeters
ItemTypeKeyword : igbt-transistors
Manufacturer : CHINA
Material : Copper
ModelName : K50T60
ModelNumber : MBQ60T65PES
NumberOfBoxes : 10
NumberOfItems : 10
PartNumber : A1
PeakOutputPowerWatts : 30000
PowerSourceType : Battery Powered
ProductDescription : MBQ60T65PES is an insulated gate bipolar transistor (IGBT) with the following specific parameters: 1 Dissipative power (PD): At a shell temperature (Tc) of 25 ℃, the dissipated power is 428W. 2. Collector current (IC): When the collector temperature (Tc) is 100 ℃, the collector current is 60A. 3. Collector emitter voltage (VCES): 650V. 4. Collector emitter saturation voltage (VCE (sat)): When the collector current (Ic) is 60A, it is 2.4V High Speed Switching & Low Power Loss VCE(sat) = 1.85V @ IC = 60A Eoff = 0.53mJ @ TC = 25°C High Input Impedance trr = 110ns (typ.) @diF/dt = 500A/ μs Maximum Junction Temperature 175°C
ProductSiteLaunchDate : 2024-08-03T17:46:09.782Z
SupplierDeclaredDgHzRegulation : other
UnspscCode : 39121000

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