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Specification
Brand : YFUSET
BulletPoint : Package contents:IRFB3607PBF 75V 80A TO-220 （5pieces）
BulletPoint1 : The product can be used in the following applications: high-speed switching devices, power supply devices, UPS, boost converters, solar inverters, speed controllers, circuit motor drivers, battery chargers, circuit battery management systems (BMS), etc
BulletPoint2 : The product consumes 200W of power, and the TO-220 package makes it a higher power device
BulletPoint3 : The gate-to-source voltage is +/-20V, the drain-source breakdown voltage is 55V, and the gate threshold voltage is between 2 and 4V; The drain current is 110A and the pulsed drain current value is 390A; The drain-to-source leakage current is 25uA, and the gate-to-source forward leakage current is 100nA
BulletPoint4 : The on-resistance is extremely low at 8.0mΩ
BulletPoint5 : The junction temperature (T J) of the product is between -55 and 175°C
BulletPoint6 : 6:Electrostatic bag packaging, convenient for storage and use. There are labels and labels for easy identification.
Color : As Shown
CurrentRating : 30 amps
ExternallyAssignedProductIdentifier : 6941835812359
ExternallyAssignedProductIdentifier1 : 0768383220612
ExternallyAssignedProductIdentifier2 : 768383220612
GpsrSafetyAttestation : 1
IncludedComponents : electronic component
ItemName : 20pcs IRF3205 IRF3205PBF N-Channel MOSFET Transistor 55V 110A TO-220 Package
ItemPackageDimensions_Height : 0.2 inches
ItemPackageDimensions_Length : 0.2 inches
ItemPackageDimensions_Width : 0.2 inches
ItemPackageQuantity : 1
ItemTypeKeyword : mosfet-transistors
Manufacturer : YFUSET
Material : Copper
MaximumVoltage : 24 volts
ModelNumber : IRFB4110PBF
MountingType : PCB Mount
NumberOfBoxes : 10
NumberOfItems : 10
OperatingVoltage : 24 volts
PartNumber : ZGW-56
PowerSourceType : Corded Electric
ProductDescription :

Product Description:

The power MOSFET IRF3205 is manufactured using advanced process technology and has a very low on-resistance

IRF3205 is a high-current N-channel MOSFET capable of switching currents up to 110A and voltages up to 55V

The specialty of MOSFETs is that they have a very low on-resistance of only 8.0mΩ, making them suitable for switching circuits such as inverters, motor speed control, DC-DC converters, etc

It is important to note that IRF3205 has a high threshold voltage and is therefore not suitable for on/off control of embedded controllers

Available in a TO-220AB package

Port Description:

1. Gate G controls the bias of the MOS transistor

2. The drain D current flows through the drain

3. The source S current flows out through the source

IRF3205 FET parameters:

The drain-source breakdown voltage (V BR (DSS)) is 55V

The gate-to-source voltage (Vgs) is +/- 20V

The threshold voltage (Vg (th)) of the gate is 2 to 4 V

The drain current (Id) is 110A

The pulsed drain current (IMD) is 390A

The power consumption is (PD) of 200W

Drain-to-source on-resistance ( R DS (ON) ) 8mΩ

The leakage current (ISSS) of the door body is 100nA

The total gate charge (Qg) is 146nC

The reverse recovery time (TRR) is 69 to 104ns

Peak diode recovery (dv/dt) is 5V/ns

The rise time (TR) is 101ns

The crust thermal resistance (R th jc) is 75°C/W

The junction temperature (Tj) is between -55 and 175°C

ProductSiteLaunchDate : 2024-09-18T14:34:01.691Z
SupplierDeclaredDgHzRegulation : not_applicable
SupplierDeclaredHasProductIdentifierExemption : 1
UnspscCode : 32101600