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Specification
Brand : CHANZON
BulletPoint1 : Product Type: High-efficiency NMOS N-Channel Power MOSFET Transistor.
BulletPoint2 : Transistor Polarity: Offering strong negative-temperature-coefficient behavior with NMOS transistor polarity.
BulletPoint3 : Specifications: Features the compact SOT-23 package, ideal for space-conscious applications.
BulletPoint4 : Application: Commonly used in a wide variety of electronic circuits requiring high-speed switching and low on-resistance.
BulletPoint5 : Package: Pack of 20 transistors in a protective Anti-Static bag offering electrostatic protection, ESD safety, and long shelf life.
Color : One Color
ExternallyAssignedProductIdentifier : 7624657702327
ItemName : Chanzon IRLML0030TRPBF SOT-23 NMOS MOS N-Channel Power MOSFET Transistor, Surface-Mounted Device (Pack of 20pcs)
ItemPackageDimensions_Height : 1.3 centimeters
ItemPackageDimensions_Length : 16 centimeters
ItemPackageDimensions_Width : 14 centimeters
ItemPackageQuantity : 1
ItemTypeKeyword : mosfet-transistors
Manufacturer : CHANZON
Material : lead
ModelName : RWEABLGJXP
ModelNumber : RWEABLGJXP
NumberOfBoxes : 1
NumberOfItems : 1
PartNumber : IRLML0030TRPBF-SOT-23-20
ProductDescription :

Product Description:
The IRLML0030TRPbF is a high-performance N-channel power MOSFET designed for applications requiring low on-resistance, high efficiency, and excellent thermal performance. Ideal for load/system switch operations, this MOSFET offers a balance of performance and reliability.
Key Features:
- Low On-Resistance: RDS(on) max 27 mΩ @ VGS = 10V, ensuring lower switching losses.
- High Drain-Source Voltage: VDS 30V for reliable operation under high voltage conditions.
- Maximum Gate-to-Source Voltage: VGS Max ± 20V, providing flexibility in gate drive requirements.
- Environmentally Friendly: RoHS compliant, free from lead, bromide, and halogen.
Electrical Characteristics:
- Drain-to-Source Breakdown Voltage (V(BR)DSS): 30V
- Gate Threshold Voltage (VGS(th)): 1.3V to 2.3V
- Turn-On Delay Time (td(on)): Typically 5.2ns
- Rise Time (tr): Typically 4.4ns
- Internal Gate Resistance (RG): 2.3Ω
Thermal Performance:
- Junction-to-Ambient Thermal Resistance (RθJA): Max 100°C/W
- Suitable for high power dissipation applications with efficient heat management.
Package: Micro3 (SOT-23), compatible with standard surface mount techniques.
Qualification: MSL1, ensuring industrial qualification and reliability.
Moisture Sensitivity Level: Consumer level, suitable for a wide range of applications.

ProductSiteLaunchDate : 2020-10-28T06:48:25.600Z
Size : SOT-23
Style : IRLML0030TRPBF
UnitCount : 1
UnspscCode : 32101600